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2015

 

Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method

CH Zhang, SL ZhaoCH Jin, AL KohY Zhou,WG Xu,  QC Li,  QH Xiong,  HL Peng*  & ZF Liu*, 

Nature Commun.2015, 6, 6519

ABSTRACT: Graphene/hexagonal boron nitride (h-BN) vertical heterostructures have recently revealed unusual physical properties and new phenomena, such as commensurate–incommensurate transition and fractional quantum hall states featured with Hofstadter’s butterfly. Graphenebased devices on h-BN substrate also exhibit high performance owing to the atomically flat surface of h-BN and its lack of charged impurities. To have a clean interface between the graphene and h-BN for better device performance, direct growth of large-area graphene/h-BN heterostructures is of great importance. Here we report the direct growth of large-area graphene/h-BN vertical heterostructures by a co-segregation method. By one-step annealing sandwiched growth substrates (Ni(C)/(B, N)-source/Ni) in vacuum, wafer-scale graphene/h-BN films can be directly formed on the metal surface. The as-grown vertically stacked graphene/h-BN structures are demonstrated by various morphology and spectroscopic characterizations. This co-segregation approach opens up a new pathway for large-batch production of graphene/h-BN heterostructures and would also be extended to the synthesis of other van der Waals heterostructures.

Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method.pdf

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