首页» 研究成果» 发表文章» 2016
2016

 

Low-temperature Growth of Two-dimensional Layered Chalcogenide Crystals on Liquid
 
YB Zhou, B Deng, Y Zhou, XB Ren, JB Yin, CH Jin, ZF Liu, HL Peng*,Nano Lett. 2016, 6(3), 2103-2107.
 

ABSTRACT: The growth of high-quality two-dimensional (2D) layered chalcogenide crystals is highly important for practical applications in future electronics, optoelectronics, and photonics. Current route for the synthesis of 2D chalcogenide crystals by vapor deposition method mainly involves an energy intensive hightemperature growth process on solid substrates, often suffering from inhomogeneous nucleation density and grain size distribution. Here, we first demonstrate a facile vapor-phase synthesis of large-area high-quality 2D layered chalcogenide crystals on liquid metal surface with relatively low surface energy at a growth temperature as low as ~100 °C. Uniform and large-domain-sized 2D crystals of GaSe and GaxIn1?xSe were grown on liquid metal surface even supported on a polyimide film. As-grown 2D GaSe crystals have been fabricated to flexible photodetectors, showing high photoresponse and excellent flexibility. Our strategy of energy-sustainable low-temperature growth on liquid metal surface may open a route to the synthesis of high-quality 2D crystals of Ga-, In-, Bi-, Hg-, Pb-, or Sn-based chalcogenides and halides.

Low-temperature Growth of Two-dimensional Layered Chalcogenide Crystals on Liquid.pdf 

Copyright(c)版权所有 永利集团纳米化学研究中心 北京市海淀区成府路202号 77779193永利集团A区4层 100871 010-62757157
最后更新日期:201828 网站统计: